EE-SX470P PHOTOELECTRIC SENSOR

Model Number

EE-SX470P

Sensor Type

Photomicrosensor

Sensing Method

Through-Beam

Sensing Distance

5 mm (slot width)

Minimum Detectable Object

Opaque object, 2 × 0.8 mm

Differential Distance

0.025 mm maximum

Light Source

Infrared LED

Wavelength

940 nm

Supply Voltage

5–24 V DC ±10%

Current Consumption

12 mA maximum

Output Type

PNP Open Collector

Maximum Load Current

50 mA

Residual Voltage

1.3 V maximum at 50 mA

Output Mode

PNP version; verify operating mode in the model datasheet

Response Frequency

1 kHz minimum, 3 kHz average

Indicator

Red LED

Protection Rating

IP50

Connection Type

4-pin connector; direct soldering possible

Housing Material

PBT

Cover Material

Polycarbonate

Operating Temperature

-25°C to +55°C

Storage Temperature

-30°C to +80°C

Approximate Weight

3.1 g